| PART |
Description |
Maker |
| DTD743XE11 DTD743XM |
200mA / 30V Low VCE (sat) Digital transistors(with built-in resistors)
|
Rohm
|
| DTB723YM DTB723YE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
| DTD743EE09 |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| EN8210 |
Bipolar Transistor, -30V, -2A, Low VCE(sat), PNP Single MCPH3
|
ON Semiconductor
|
| EN7364 |
Bipolar Transistor, 30V, 0.7A, Low VCE(sat) NPN Single MCPH3
|
ON Semiconductor
|
| EN7129C |
Bipolar Transistor (-)30V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3
|
ON Semiconductor
|
| NSS20600CF8T1G NSS20600CF8 |
20V 6A LOW VCE(sat) PNP High Current Transistor ChipFET™
20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶体
|
ON Semiconductor
|
| NSS35200MR6T1G |
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 浣?CE(sat) PNP?朵?绠?
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| NSS20500UW3T2G |
20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| IXGH28N60B |
Ultra Low VCE(sat) IGBT with Diode(VCES涓?00V锛?CE(sat)涓?.0V???缂??????朵?绠?甯?????锛?
|
IXYS CORP
|
| TSB1184ACPS TSB1184A TSB1184ACP TSB1184ACPQ TSB118 |
Low Vce(sat) PNP Transistor 低Vce（sat）PNP晶体
|
Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
